Morphological evolution, Raman and photoluminescence spectra in optically transparent cubic silicon carbide

Author(s):  
Michael W. Russell ◽  
Jaime A. Freitas Jr. ◽  
W. James Moore ◽  
James E. Butler
Crystals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 115 ◽  
Author(s):  
A.A. Lebedev ◽  
G.A. Oganesyan ◽  
V.V. Kozlovski ◽  
I.A. Eliseyev ◽  
P.V. Bulat

The effect of 8 MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It was found that the carrier removal rate (Vd) in 3C-SiC is ~100 cm−1, which is close to Vd in 4H-SiC. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of the so-called defect-related photoluminescence was observed. An assumption is made that radiation-induced compensation processes in 3C-SiC are affected by structural defects (twin boundaries), which are always present in epitaxial cubic silicon carbide layers grown on substrates of the hexagonal polytypes.


2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Peter A. Schultz ◽  
Renee M. Van Ginhoven ◽  
Arthur H. Edwards

1999 ◽  
Vol 17 (5) ◽  
pp. 2629-2633 ◽  
Author(s):  
F. Amy ◽  
L. Douillard ◽  
V. Yu. Aristov ◽  
P. Soukiassian

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